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Freescale Semiconductor Technical Data
Document Number: MRFE6S9125N Rev. 0, 10/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. N - CDMA Application * Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20.2 dB Drain Efficiency -- 31% ACPR @ 750 kHz Offset = - 45.7 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 60 Watts Avg., Full Frequency Band (865 - 960 MHz or 920 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 40% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.8% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Frequency Band (920 - 960 MHz) Power Gain -- 19 dB Drain Efficiency -- 62% Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Maximum Operation Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2)
MRFE6S9125NR1 MRFE6S9125NBR1
880 MHz, 27 W AVG., 28 V SINGLE N - CDMA, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1
CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S9125NBR1
Symbol VDSS VGS VDD Tstg TC TJ
Value - 0.5, +66 - 0.5, +12 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 125 W CW Case Temperature 76C, 27 W CW Symbol RJC Value (2,3) 0.44 0.45 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRFE6S9125NR1 MRFE6S9125NBR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.74 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 1.9 64 350 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 2 0.05 2.1 2.86 0.24 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 10 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part is internally input matched. (continued) Gps D ACPR IRL 19 29 -- -- 20.2 31 - 45.7 - 18 24 -- - 44 -9 dB % dBc dB
MRFE6S9125NR1 MRFE6S9125NBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 60 W Avg., 920 - 960 MHz, EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW (f = 880 MHz) Gps D EVM SR1 SR2 Gps D IRL P1dB -- -- -- -- -- -- -- -- -- 20 40 1.8 - 63 - 78 19 62 - 12 125 -- -- -- -- -- -- -- -- -- dB % % rms dBc dBc dB % dB W
Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W, 920 - 960 MHz
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, 865 - 900 MHz Bandwidth VBW Video Bandwidth @ 125 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) -- 10 -- IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 35 MHz Bandwidth @ Pout = 27 W Avg. Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) GF G P1dB -- -- -- 0.93 0.011 0.205 -- -- --
MHz
dB dB/C dBm/C
MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 3
R1 VBIAS + C10 RF INPUT C9 + C8 + C7 R2 C6 L1 Z1 C1 C2 C3 C5 Z2 Z3 Z4 Z5 Z6 Z7 C4 Z8 C11 DUT C12 C13 C14 Z9 Z10 L2 Z11 Z12 Z13 Z14 C18 C19
+ C20
+ C21
+ C22
VSUPPLY C23
Z15
Z16
RF Z17 OUTPUT C17
C15
C16
Z1, Z17 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
0.200 1.060 0.382 0.108 0.200 0.028 0.236 0.050 0.238
x 0.080 x 0.080 x 0.220 x 0.220 x 0.420 x 0.620 x 0.620 x 0.620 x 0.620
Microstrip Microstrip Microstrip Microstrip x 0.620 Taper Microstrip Microstrip Microstrip Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB
0.057 x 0.620 Microstrip 0.119 x 0.620 Microstrip 0.450 x 0.220 Microstrip 0.061 x 0.220 Microstrip 0.078 x 0.220 Microstrip 0.692 x 0.080 Microstrip 0.368 x 0.080 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRFE6S9125NR1(NBR1) Test Circuit Schematic
Table 6. MRFE6S9125NR1(NBR1) Test Circuit Component Designations and Values
Part C1 C2 C3, C15 C4, C5 C6, C18, C19 C7, C8 C9, C23 C10 C11, C12 C13, C14 C16 C17 C20, C21 C22 L1 L2 R1 R2 Description 20 pF Chip Capacitor 6.2 pF Chip Capacitor 0.8 - 8.0 pF Variable Capacitors, Gigatrim 11 pF Chip Capacitors 0.56 F, 50 V Chip Capacitors 47 F, 16 V Tantalum Capacitors 47 pF Chip Capacitors 100 F, 50 V Electrolytic Capacitor 12 pF Chip Capacitors 5.1 pF Chip Capacitors 0.3 pF Chip Capacitor 39 pF Chip Capacitor 22 F, 35 V Tantalum Capacitors 470 F, 63 V Electrolytic Capacitor 7.15 nH Inductor 8.0 nH Inductor 15 , 1/3 W Chip Resistor 560 k, 1/4 W Resistor Part Number ATC100B200FT500XT ATC100B6R2BT500XT 27291SL ATC100B110FT500XT C1825C564J5RAC T491B476K016AT ATC700B470FT500XT MCHT101M1HB - 1017 - RH ATC100B120FT250XT ATC100B5R1BT250XT ATC700B0R3BT500XT ATC700B390FT500XT T491X226K035AT EKME630ELL471MK25S 1606 - 7J A03T CRCW121015R0FKEA CRCW12065600FKEA ATC ATC Johanson ATC Kemet Kemet ATC Multicomp ATC ATC ATC ATC Kemet Multicomp CoilCraft CoilCraft Vishay Vishay Manufacturer
MRFE6S9125NR1 MRFE6S9125NBR1 4 RF Device Data Freescale Semiconductor
C8 C7 C9 VGG C10 C1 CUT OUT AREA L1 C2 C5 C3 C6 C19
C20 C21
C22
R2 R1
VDD C18 C14 L2 C23 C17
C4
C11
C13 C12
C15
C16
900 MHz TO272 WB Rev. 0
Figure 2. MRFE6S9125NR1(NBR1) Test Circuit Component Layout
MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 0 ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 D, DRAIN EFFICIENCY (%) 0 ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 712 mA 1425 mA -50 950 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 1187 mA 21 20 Gps, POWER GAIN (dB) 19 Gps 18 17 16 15 14 820 840 860 880 900 920 940 960 f, FREQUENCY (MHz) ALT1 IRL ACPR -50 -60 -70 980 D VDD = 28 Vdc, Pout = 27 W (Avg.) IDQ = 950 mA, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 40 30 20 -30 -40
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg.
20 Gps 19 Gps, POWER GAIN (dB) 18 17 16 15 14 13 820 840 860 880 900 920 940 960 f, FREQUENCY (MHz) ALT1 IRL ACPR -40 -50 -60 980 D VDD = 28 Vdc, Pout = 62.5 W (Avg.) IDQ = 950 mA, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 50 40 30 -30 60
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 62.5 Watts Avg.
22 21 Gps, POWER GAIN (dB) 20 19 18 17 16 1187 mA 950 mA 712 mA 475 mA IDQ = 1475 mA -10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements -20
-30 IDQ = 475 mA -40
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRFE6S9125NR1 MRFE6S9125NBR1 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 0 VDD = 28 Vdc, IDQ = 950 mA f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements -10 VDD = 28 Vdc, Pout = 125 W (PEP) IDQ = 950 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz IM3-U IM3-L IM5-U -40 IM5-L -50 IM7-U IM7-L -60 1 10 TWO-TONE SPACING (MHz) 80
-20
-20
-40 3rd Order -60 5th Order -80 7th Order -100 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP
-30
Figure 7. Intermodulation Distortion Products versus Output Power
60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 29 30 31 32 33 34 35 P1dB = 51.92 dBm (155.6 W) P3dB = 52.83 dBm (191.87 W)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
P6dB = 53.39 dBm (218.27 W)
Ideal
Actual VDD = 28 Vdc, IDQ = 950 mA, Pulsed CW 12 sec(on), 1% Duty Cycle, f = 880 MHz 36 37 38 39
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 70 60 50 40 -30_C 30 20 10 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 Gps D ALT1 ACPR 85_C -50 -30_C -60 85_C -70 25_C -80 200 -10 TC = -30_C 25_C -30_C 85_C 25_C 85_C 25_C -40 -20 -30 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc)
VDD = 28 Vdc, IDQ = 950 mA f = 880 MHz, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power
MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
22 21 20 Gps, POWER GAIN (dB) 19 18 17 16 15 14 1 10 Pout, OUTPUT POWER (WATTS) CW 100 D VDD = 28 Vdc IDQ = 950 mA f = 880 MHz 25_C 85_C 80 TC = -30_C -30_C D, DRAIN EFFICIENCY (%) 25_C 85_C 60 50 40 30 20 10 0 300 16 0 40 80 120 160 200 240 280 Pout, OUTPUT POWER (WATTS) CW 70 20 Gps, POWER GAIN (dB) 21 IDQ = 950 mA f = 880 MHz
Gps
19
18 32 V 17 VDD = 24 V 28 V
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
Figure 12. Power Gain versus Output Power
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 27 W Avg., and D = 31%. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6S9125NR1 MRFE6S9125NBR1 8 RF Device Data Freescale Semiconductor
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100
1.2288 MHz Channel BW .. ... ..... . .. .............................. ............ ............. . . .. . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . . . ............ ........... ...... .... ........ ..... ... . ....... ....... .. ... ....... . .... .... .. . . .. ......... ......... ... . ..... ...... ....... .. ..... . ..... ... ... . .... .... . ..... .... . ..... . .... ......... . .. .. . ...... .... ....... .. ........ -ACPR in 30 kHz +ACPR in 30 kHz .............. . . .. . . ... .... .......... ..... . ............... . ......... .... ........... Integrated BW Integrated BW .. ...... ... . ............ . ..... .. .. .. ...... ....... ...
Figure 14. Single - Carrier CCDF N - CDMA
-110 -3.6 -2.9 -2.2
-1.5 -0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 9
f = 900 MHz Zload
f = 860 MHz
Zo = 5
f = 900 MHz
Zsource f = 860 MHz
VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. f MHz 860 865 870 875 880 885 890 895 900 Zsource 0.62 - j2.13 0.64 - j2.31 0.62 - j2.45 0.59 - j2.43 0.57 - j2.42 0.54 - j2.36 0.57 - j2.18 0.58 - j1.94 0.59 - j1.86 Zload 1.48 - j0.14 1.56 - j0.09 1.66 - j0.02 1.73 + j0.04 1.74 + j0.11 1.68 + j0.19 1.61 + j0.25 1.52 + j0.33 1.48 + j0.37
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance MRFE6S9125NR1 MRFE6S9125NBR1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 11
MRFE6S9125NR1 MRFE6S9125NBR1 12 RF Device Data Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 13
MRFE6S9125NR1 MRFE6S9125NBR1 14 RF Device Data Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 15
MRFE6S9125NR1 MRFE6S9125NBR1 16 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Oct. 2007 * Initial Release of Data Sheet Description
MRFE6S9125NR1 MRFE6S9125NBR1 RF Device Data Freescale Semiconductor 17
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MRFE6S9125NR1 MRFE6S9125NBR1
Rev. 18 0, 10/2007 Document Number: MRFE6S9125N
RF Device Data Freescale Semiconductor

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